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固態電子元件Homework#1Problem1.(a)Howmanysiliconatomsarethereineachunitcell?(b)Howmanysiliconatomsarethereinonecubiccentimeter?Knowingthatthelengthofasideoftheunitcell(thesiliconlatticeconstant)is5.43Å,Siatomicweightis28.1,andtheAvogdaro’snumberis6.02x1023atoms/mole,findthesilicondensitying/cm3Problem2.ConsideraSiliconwaferdopedwithArsenicataconcentrationof1018cm-3.Ifonlyhalfofthedopantatomsareionized,whataretheelectronandholeconcentrations?WhatistheenergydifferencebetweenEcandEf?BetweenEfandEv?Problem3.AnN-typesiliconsamplehasauniformdensityNd=1017cm-3ofarsenic,andaP-typesamplehasNa=1015cm-3.Athirdsamplehasbothimpuritiespresentatthesametime.Afourthsampleispureundopedsilicon.(a)Findtheequilibriumminoritycarrierconcentrationsat300Kineachsample.(b)Findtheconductivityofeachsampleat300K.(c)FindtheFermilevelineachmaterialat300Kwithrespecttoeithertheconductionbandedge(Ec)orthevalencebandedge(Ev).Problem4.Semiconductorcarriermobilityinintrinsicmaterialsare(a)higher,(b)lower,or(c)thesame,thanthoseinaheavilydopedmaterial?Pleaseexplain.Whataboutresistivity?Pleaseexplain.Problem5.Youaregiventhefollowingfieldvs.positioncurveforaPNjunction:(a)IfthedopingontheP-sideis1017cm-3,whatisthedopingontheN-side?Showyourcalculations(b)Drawabanddiagramfortheabovediode.Indicatethevalueofthebuilt-involtage.(c)Istheabovefield-vs-positiondiagramaccurate?Whatassumptionshavewemadeintheabovediagram?Drawafield-vs-positiondiagramthatwouldbemorerealistic,i.e.,withoutmakingtheassumptionsmadeabove.(d)SketchaplotoftheplotoftheexcessminoritycarrierprofilesinthePandNregionsunderaforwardbiasof0.5V(Note:exp(0.5/0.026)~5108).Labelthepeakexcessminoritycarriervalues.交作業日期:95/4/12上課時間
